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LF2113BTR, Gate Drivers HI LO Side DRVR 600V 2A SOIC-16
Power\Power Management ICs\Gate DriversGate Drivers for N-Channel MOSFETs & IGBTs IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.
| Brand | IXYS |
| Factory Pack Quantity | 1500 |
| Fall Time | 13 ns |
| Logic Type | CMOS |
| Manufacturer | IXYS |
| Maximum Operating Temperature | +125 C |
| Maximum Turn-Off Delay Time | 94 ns |
| Maximum Turn-On Delay Time | 105 ns |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number of Drivers | 2 Driver |
| Number of Outputs | 2 Output |
| Operating Supply Current | 56 uA |
| Package/Case | SOIC-16 |
| Pd - Power Dissipation | 1.25 W |
| Product Category | Gate Drivers |
| Product Type | Gate Drivers |
| Product | IGBT, MOSFET Gate Drivers |
| Propagation Delay - Max | 20 ns |
| Rise Time | 15 ns |
| Subcategory | PMIC-Power Management ICs |
| Supply Voltage - Max | 20 V |
| Supply Voltage - Min | 10 V |
| Technology | Si |
| Type | High-Side, Low-Side |
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