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LMG1025QDEERQ1, Gate Drivers Automotive 7-A/5-A single-channel low-side gate driver with 5-V UVLO for narrow pulse applications 6-WSON -40 t

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LMG1025QDEERQ1, Gate Drivers Automotive 7-A/5-A single-channel low-side gate driver with 5-V UVLO for narrow pulse applications 6-WSON -40 t

Power\Power Management ICs\Gate DriversLMG1025/LMG1025-Q1 Half-Bridge GaN Driver Texas Instruments LMG1025/LMG1025-Q1 Half-Bridge GaN Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement-mode GaN FETs. The inputs of the LMG1205/LMG1025-Q1 are TTL logic compatible and can withstand input voltages up to 14V regardless of the V DD voltage. The LMG1205/LMG1205-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

Brand	Texas Instruments
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	850 ps
Manufacturer	Texas Instruments
Maximum Operating Temperature	+125 C
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Number of Drivers	1 Driver
Number of Outputs	1 Output
Output Current	7 A
Packaging	Reel, Cut Tape
Product Category	Gate Drivers
Product Type	Gate Drivers
Product	MOSFET Gate Drivers
Rise Time	650 ps
Subcategory	PMIC-Power Management ICs
Supply Voltage - Max	5.25 V
Supply Voltage - Min	4.75 V
Tradename	GaN
Type	Low-Side
Вес, г	0.01