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LMG1205YFXT, Gate Drivers 1.2-A, 5-A 90-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET 12-DSBGA -40 to 125

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LMG1205YFXT, Gate Drivers 1.2-A, 5-A 90-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET 12-DSBGA -40 to 125

Power\Power Management ICs\Gate DriversLMG1205 Half-Bridge Gate Driver Texas Instruments LMG1205 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5V. This feature prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LMG1205 has split-gate outputs which provide flexibility to adjust the turn-on and turn-off strength independently.

Brand	Texas Instruments
Factory Pack Quantity: Factory Pack Quantity	250
Fall Time	3.5 ns
Manufacturer	Texas Instruments
Maximum Operating Temperature	+125 C
Maximum Turn-Off Delay Time	50 ns
Maximum Turn-On Delay Time	50 ns
Minimum Operating Temperature	-40 C
Mounting Style	SMD/SMT
Number of Drivers	2 Driver
Number of Outputs	2 Output
Operating Supply Current	2 mA
Output Current	5 A
Package / Case	DSBGA-12
Product Category	Gate Drivers
Product Type	Gate Drivers
Product	Half-Bridge Drivers
Rise Time	7 ns
Series	LMG1205
Subcategory	PMIC-Power Management ICs
Supply Voltage - Max	5.5 V
Supply Voltage - Min	4.5 V
Technology	Si
Tradename	GaN
Type	High-Side, Low-Side
Вес, г	0.01