Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
LMG1210RVRR
LMG1210 200V Half-Bridge MOSFET & GaN FET Drivers
Texas Instruments LMG1210 200V Half-Bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) Drivers are designed for ultra-high frequency and high-efficiency applications. The device is ideal for applications that feature adjustable deadtime capability, very small propagation delay, and 3.4ns high-side low-side matching to optimize system efficiency. The LMG1210 MOSFET and GaN FET Drivers offer an internal LDO which ensures a gate-drive voltage of 5V regardless of supply voltage.
| Brand | Texas Instruments |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 500 ps |
| Logic Type | TTL |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +125 C |
| Maximum Turn-Off Delay Time | 18 ns |
| Maximum Turn-On Delay Time | 18 ns |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number of Drivers | 2 Driver |
| Number of Outputs | 2 Output |
| Off Time - Max | 18 ns |
| Operating Supply Current | 380 uA |
| Output Current | 3 A |
| Output Voltage | 5 V |
| Package / Case | WQFN-19 |
| Product Category | Gate Drivers |
| Product Type | Gate Drivers |
| Product | MOSFET Gate Drivers |
| Propagation Delay - Max | 20 ns |
| Rds On - Drain-Source Resistance | 400 mOhms |
| Rise Time | 500 ps |
| Series | LMG1210 |
| Subcategory | PMIC-Power Management ICs |
| Supply Voltage - Max | 18 V |
| Supply Voltage - Min | 4.75 V |
| Technology | GaN |
| Tradename | GaN |
| Type | High-Side, Low-Side |
| Вес, г | 0.03 |
Похожие товары
Цена по запросу
BSP772TXUMA1, Умный переключатель питания, технология SIPMOS, высокая сторона, 1 выход, 12А [SOIC-8]
Цена по запросу
Цена по запросу
Цена по запросу
Цена по запросу
