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LMG1210RVRT, Gate Drivers 1.5-A, 3-A, 200-V half bridge gate driver, 5-V UVLO and programmable dead-time for GaNFET and MOSFET 19-WQFN -40 t

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LMG1210RVRT, Gate Drivers 1.5-A, 3-A, 200-V half bridge gate driver, 5-V UVLO and programmable dead-time for GaNFET and MOSFET 19-WQFN -40 t

Power\Power Management ICs\Gate DriversLMG1210 200V Half-Bridge MOSFET & GaN FET Drivers Texas Instruments LMG1210 200V Half-Bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) Drivers are designed for ultra-high frequency and high-efficiency applications. The device is ideal for applications with adjustable deadtime capability, very small propagation delay, and 3.4ns high-side low-side matching to optimize system efficiency. The LMG1210 MOSFET and GaN FET Drivers offer an internal LDO, which ensures a gate-drive voltage of 5V regardless of the supply voltage.

Brand	Texas Instruments
Factory Pack Quantity: Factory Pack Quantity	250
Fall Time	500 ps
Logic Type	TTL
Manufacturer	Texas Instruments
Maximum Operating Temperature	+125 C
Maximum Turn-Off Delay Time	18 ns
Maximum Turn-On Delay Time	18 ns
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Number of Drivers	2 Driver
Number of Outputs	2 Output
Off Time - Max	18 ns
Operating Supply Current	380 uA
Output Current	3 A
Output Voltage	5 V
Package/Case	WQFN-19
Product Category	Gate Drivers
Product Type	Gate Drivers
Product	MOSFET Gate Drivers
Propagation Delay - Max	20 ns
Rds On - Drain-Source Resistance	400 mOhms
Rise Time	500 ps
Series	LMG1210
Subcategory	PMIC-Power Management ICs
Supply Voltage - Max	18 V
Supply Voltage - Min	4.75 V
Technology	GaN
Tradename	GaN
Type	High-Side, Low-Side
Вес, г	0.03