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LMG2610RRGT, Gate Drivers 650-V 170/248-m? GaN half-bridge for ACF with integrated driver, protection and current sense 40-VQFN -40 to 150

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LMG2610RRGT, Gate Drivers 650-V 170/248-m? GaN half-bridge for ACF with integrated driver, protection and current sense 40-VQFN -40 to 150

Power\Power Management ICs\Gate DriversLMG2610 GaN Half-Bridge IC Texas Instruments LMG2610 GaN Half-Bridge IC is a 650V GaN power-FET half bridge for < 75W active-clamp flyback (ACF) converters in switch-mode power supply applications. The LMG2610 reduces component count, simplifies design, and reduces board space by integrating gate drivers, half-bridge power FETs, bootstrap diode, and high-side gate-drive level shifter in a 9mm by 7mm QFN package. The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor. It allows the low-side thermal pad to be connected to the cooling PCB power ground.

Brand	Texas Instruments
Configuration	Non-Inverting
Development Kit	UCC28782EVM-030
Factory Pack Quantity: Factory Pack Quantity	250
Fall Time	12.5 ns
Input Voltage, Max	26 V
Input Voltage, Min	10 V
Manufacturer	Texas Instruments
Maximum Operating Temperature	+125 C
Maximum Turn-Off Delay Time	43 ns
Maximum Turn-On Delay Time	12.5 ns
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Number of Drivers	2 Driver
Number of Outputs	2 Output
Output Current	3 A
Output Voltage	19.95 V
Package / Case	VQFN-40
Packaging	Reel, Cut Tape
Product Category	Gate Drivers
Product Type	Gate Drivers
Product	Half-Bridge Drivers
Rds On - Drain-Source Resistance	170 mOhms
Rise Time	14.9 ns
Series	LMG2610
Shutdown	No Shutdown
Subcategory	PMIC-Power Management ICs
Supply Voltage - Max	26 V
Supply Voltage - Min	7.5 V
Technology	GaN
Type	Half-Bridge