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LMG3411R050RWHT, Gate Drivers 600-V 50m? GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN -40 to 150
Power\Power Management ICs\Gate DriversLMG341xR050 GaN Power Stage
Texas Instruments LMG341xR050 GaN Power Stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x"s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
| Brand | Texas Instruments |
| Configuration | Non-Inverting |
| Factory Pack Quantity: Factory Pack Quantity | 250 |
| Fall Time | 26 ns |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +125 C |
| Maximum Turn-Off Delay Time | 8.9 ns |
| Maximum Turn-On Delay Time | 5.2 ns |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number of Drivers | 1 Driver |
| Number of Outputs | 1 Output |
| Operating Supply Current | 23 mA |
| Output Current | 12 A |
| Output Voltage | 5 V |
| Package / Case | VQFN-32 |
| Packaging | Reel, Cut Tape |
| Product Category | Gate Drivers |
| Product Type | Gate Drivers |
| Product | MOSFET Gate Drivers |
| Rds On - Drain-Source Resistance | 57 mOhms |
| Rise Time | 2.9 ns |
| Series | LMG3411R050 |
| Subcategory | PMIC-Power Management ICs |
| Supply Voltage - Max | 18 V |
| Supply Voltage - Min | 9.5 V |
| Technology | GaN |
| Tradename | GaN |
| Type | Half-Bridge |
| Вес, г | 0.19 |
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