Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
LS4150GS08, Диод: выпрямительный Шоттки
Diodes\Switching DiodesFeatures • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction
Forward Voltage (Vf@If) | 1V@200mA |
Rectified Current | 600mA |
Reverse Leakage Current | 100nA@50V |
Reverse Recovery Time (trr) | 8ns |
Reverse Voltage (Vr) | 50V |
Average Forward Current | 300мА |
Forward Surge Current | 4А |
Forward Voltage Max | 1В |
Repetitive Peak Reverse Voltage | 50В |
Reverse Recovery Time | 4нс |
Квалификация | AEC-Q101 |
Количество Выводов | 2вывод(-ов) |
Максимальная Рабочая Температура | 175 C |
Стиль Корпуса Диода | MiniMELF |
Diode Configuration | Single |
Diode Technology | Silicon Junction |
Diode Type | Fast Switching Diode |
Maximum Continuous Forward Current | 600mA |
Maximum Forward Voltage Drop | 1V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | Quadro Melf |
Peak Non-Repetitive Forward Surge Current | 4A |
Peak Reverse Recovery Time | 4ns |
Peak Reverse Repetitive Voltage | 50V |
Pin Count | 2 |
Rectifier Type | Small Signal |
Capacitance | 2.5pF |
Case | MELF quadro, SOD80 |
Features of semiconductor devices | small signal |
Kind of package | reel, tape |
Leakage current | 0.1mA |
Load current | 0.6A |
Manufacturer | VISHAY |
Max. forward impulse current | 4A |
Max. forward voltage | 1V |
Max. off-state voltage | 50V |
Mounting | SMD |
Power dissipation | 0.5W |
Semiconductor structure | single diode |
Type of diode | Schottky switching |
Вес, г | 0.05 |