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LSIC1MO120G0040

Semiconductors\Discrete SemiconductorsLSIC1MO120G0x N-Channel SiC MOSFETs IXYS LSIC1MO120G0x N-Channel SiC MOSFETs offer a 1200V drain-source voltage rating, 25mΩ to 160mΩ resistance range, and 14A to 70A currents. These MOSFETs are optimized for high-frequency, high-efficiency applications, and feature ultra-low on-resistance, low gate resistance, and normally-off operations at all temperatures. The IXYS LSIC1MO120G0x N-Channel SiC MOSFETs are ideal for solar inverters, switch-mode power supplies, motor drives, battery chargers, and more.

Brand	IXYS
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	450
Fall Time	8 ns
Id - Continuous Drain Current	70 A
Manufacturer	IXYS
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package/Case	TO-247-4
Packaging	Tube
Pd - Power Dissipation	357 W
Product Category	SiC MOSFETs
Product Type	SiC MOSFETS
Qg - Gate Charge	175 nC
Rds On - Drain-Source Resistance	50 mOhms
Rise Time	9 ns
Subcategory	Transistors
Technology	SiC
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	22 ns
Typical Turn-On Delay Time	13 ns
Vds - Drain-Source Breakdown Voltage	1.2 kV
Vgs - Gate-Source Voltage	-5 V, +20 V
Vgs th - Gate-Source Threshold Voltage	4 V