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LTR-301, Phototransistors Phototrans Clear
Sensors\Optical Sensors\Phototransistors Описание Фототранзистор, прозрачная, -p макс 940нм, 10нА, 30В, THT
Current - Collector (Ic) (Max) | 2.4mA |
Current - Dark (Id) (Max) | 100nA |
ECCN | EAR99 |
HTSUS | 8541.40.7080 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -40В°C ~ 85В°C (TA) |
Orientation | Side View |
Package | Bulk |
Package / Case | Radial |
Power - Max | 100mW |
RoHS Status | ROHS3 Compliant |
Viewing Angle | 70В° |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Wavelength | 940nm |
Automotive | No |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Fabrication Technology | NPN Transistor |
Lead Shape | Through Hole |
Lens Color | Clear Transparent |
Lens Shape Type | Domed |
Maximum Collector Current (mA) | 4.5 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
Maximum Collector-Emitter Voltage (V) | 30 |
Maximum Dark Current (nA) | 100 |
Maximum Emitter-Collector Voltage (V) | 5 |
Maximum Fall Time (ns) | 15000(Typ) |
Maximum Light Current (uA) | 2400 |
Maximum Operating Temperature (°C) | 85 |
Maximum Power Dissipation (mW) | 100 |
Maximum Rise Time (ns) | 10000(Typ) |
Minimum Operating Temperature (°C) | -40 |
Mounting | Through Hole |
Number of Channels per Chip | 1 |
Part Status | Active |
PCB changed | 2 |
Phototransistor Type | Phototransistor |
Pin Count | 2 |
Polarity | NPN |
PPAP | No |
Type | Chip |
Viewing Orientation | Side View |
Brand | Lite-On |
Collector- Emitter Voltage VCEO Max | 30 V |
Collector-Emitter Breakdown Voltage | 30 V |
Collector-Emitter Saturation Voltage | 0.4 V |
Dark Current | 100 nA |
Factory Pack Quantity | 1000 |
Fall Time | 15 us |
Half Intensity Angle Degrees | 20 deg |
Height | 5.72 mm |
Length | 4.4 mm |
Lens Color/Style | Clear |
Manufacturer | Lite-On |
Maximum On-State Collector Current | 3.84 mA |
Maximum Operating Temperature | +85 C |
Minimum Operating Temperature | -40 C |
Mounting Style | Through Hole |
Operating Supply Voltage | 5 V |
Packaging | Bulk |
Pd - Power Dissipation | 100 mW |
Peak Wavelength | 940 nm |
Product | Phototransistors |
Product Category | Phototransistors |
Rise Time | 10 us |
RoHS | Details |
Width | 2.25 mm |