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Цена по запросу
LTR-4206E
Электроэлемент Описание Фототранзистор, черная, 20°, -p макс 940нм, 100нА, 30В, THT Характеристики
Монтаж
THT
| Монтаж | THT |
| Current - Collector (Ic) (Max) | 4.8mA |
| Current - Dark (Id) (Max) | 100nA |
| Manufacturer | Lite-On Inc. |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 85В°C(TA) |
| Orientation | Top View |
| Package / Case | T-1 |
| Packaging | Bulk |
| Part Status | Active |
| Power - Max | 100mW |
| Viewing Angle | 20В° |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Wavelength | 940nm |
| ECCN | EAR99 |
| HTSUS | 8541.40.7080 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Package | Bulk |
| RoHS Status | ROHS3 Compliant |
| Automotive | No |
| Cut-Off Filter | Visible Cut-off |
| Diameter | 4 |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 10 |
| Lead Shape | Through Hole |
| Lens Color | Clear |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 4.5 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Fall Time (ns) | 15000(Typ) |
| Maximum Light Current (uA) | 2000(Typ) |
| Maximum Operating Temperature (°C) | 85 |
| Maximum Power Dissipation (mW) | 100 |
| Maximum Rise Time (ns) | 10000(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Number of Channels per Chip | 1 |
| PCB changed | 2 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | No |
| Standard Package Name | T-1 |
| Supplier Package | T-1 |
| Type | IR Chip |
| Viewing Orientation | Top View |
| Collector-emitter voltage | 30V |
| Dark current | 0.1µA |
| LED diameter | 3mm |
| LED lens | black |
| Type of photoelement | phototransistor |
| Wavelength of peak sensitivity | 940nm |
| Вес, г | 0.128 |
