Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount
Semiconductors\Discrete Semiconductors\IGBTsThe Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
Channel Type | N |
Configuration | Dual |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 650 A |
Maximum Gate Emitter Voltage | ±30V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.1 kW |
Minimum Operating Temperature | -40 °C |
Mounting Type | PCB Mount |
Package Type | SimBus F |
Pin Count | 11 |
Transistor Configuration | Series |
Вес, г | 5 |