Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

MSCGLQ75H120CTBL3NG, IGBT Modules PM-IGBT-SBD-BL3

Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesHigh-Speed IGBT4 Power Modules Microchip Technology High-Speed IGBT4 Power Modules feature low voltage drop, low leakage current, and low switching losses. These modules operate at 1200V collector-emitter voltage (VCES) and provide very low stray inductance, Kelvin emitter/source for an easy drive, and extended temperature range. The benefits of IGBT4 modules are high-efficiency converters, offer outstanding performance at high-frequency operation, low profile, and low junction-to-heatsink thermal resistance. These modules are used in applications like high-reliability power systems, AC switches, high-efficiency AC/DC and DC/AC converters, and motor control.

Brand	Microchip Technology
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	2.4 V
Configuration	Full Bridge
Continuous Collector Current at 25 C	160 A
Factory Pack Quantity	1
Gate-Emitter Leakage Current	150 nA
Manufacturer	Microchip
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Screw Mount
Pd - Power Dissipation	470 W
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Modules
Subcategory	IGBTs
Technology	Si
Current - Collector (Ic) (Max)	160 A
Current - Collector Cutoff (Max)	50 µA
Input	Standard
Input Capacitance (Cies) @ Vce	4.4 nF @ 25 V
Mounting Type	Chassis Mount
NTC Thermistor	Yes
Operating Temperature	-55°C ~ 175°C(TJ)
Package / Case	Module
Power - Max	470 W
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max)	1200 V