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MUR4100EG

Электроэлемент Описание Диод: выпрямительный, THT, 1кВ, 4А, россыпью, Ifsm: 70А, CASE267-05 Характеристики Категория Диод Тип высоковольтный

Категория	Диод
Тип	высоковольтный
Brand	ON Semiconductor
Configuration	Single
Factory Pack Quantity	1500
Height	5.3 mm(Max)
If - Forward Current	4 A
Ir - Reverse Current	25 uA
Length	9.5 mm(Max)
Manufacturer	ON Semiconductor
Max Surge Current	70 A
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-65 C
Mounting Style	Through Hole
Package / Case	DO-201AD
Packaging	Reel
Pd - Power Dissipation	-
Product	Rectifiers
Product Category	Rectifiers
Recovery Time	100 ns
RoHS	Details
Series	MUR4100E
Termination Style	Through Hole
Type	Fast Recovery Rectifiers
Unit Weight	0.038801 oz
Vf - Forward Voltage	1.85 V
Vr - Reverse Voltage	1000 V
Width	5.3 mm(Max)
Diameter	5.3mm
Diode Configuration	Single
Diode Technology	Silicon Junction
Diode Type	Rectifier
Maximum Continuous Forward Current	4A
Maximum Forward Voltage Drop	1.85V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	DO-201AD
Peak Non-Repetitive Forward Surge Current	70A
Peak Reverse Recovery Time	100ns
Peak Reverse Repetitive Voltage	1000V
Pin Count	2
Rectifier Type	General Purpose
Case	CASE267-05
Features of semiconductor devices	ultrafast switching
Kind of package	bulk
Load current	4A
Max. forward impulse current	70A
Max. forward voltage	1.85V
Max. off-state voltage	1kV
Mounting	THT
Reverse recovery time	75ns
Semiconductor structure	single diode
Type of diode	rectifying
Вес, г	1.14