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N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-E3
Semiconductors\Discrete Semiconductors\MOSFETsSI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 1.15 A |
| Maximum Drain Source Resistance | 250 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 730 mW |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 3.3 nC @ 10 V |
| Width | 1.4mm |
| Brand | Vishay Semiconductors |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 10 ns |
| Forward Transconductance - Min | 4 S |
| Id - Continuous Drain Current | 1.15 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Part # Aliases | SI2328DS-T1-BE3 SI2328DS-E3 |
| Pd - Power Dissipation | 730 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 3.3 nC |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Rise Time | 11 ns |
| Series | SI2 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 9 ns |
| Typical Turn-On Delay Time | 7 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Вес, г | 5 |
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