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N-Channel MOSFET, 10.6 A, 60 V, 8-Pin MLP8 FDMS5672

Semiconductors\Discrete Semiconductors\MOSFETsUItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	10.6 A
Maximum Drain Source Resistance	12 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	MLP8
Pin Count	8
Series	UltraFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	32 nC @ 10 V
Width	6mm
Brand	onsemi/Fairchild
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	8 ns
Forward Transconductance - Min	26 S
Id - Continuous Drain Current	10.6 A
Manufacturer	onsemi
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	Power-56-8
Pd - Power Dissipation	2.5 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	45 nC
Rds On - Drain-Source Resistance	11.5 mOhms
Rise Time	17 ns
Series	FDMS5672
Subcategory	MOSFETs
Technology	Si
Tradename	UltraFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	Power MOSFET
Typical Turn-Off Delay Time	22 ns
Typical Turn-On Delay Time	16 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Вес, г	5