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NCD5700DR2G, Gate Drivers HIGH CURRENT IGBT GATE DR

Power\Power Management ICs\Gate DriversSolutions for Energy Infrastructure onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Brand	onsemi
Configuration	Inverting, Non-Inverting
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	19 ns
Features	DESAT Protection, Tight UVLO Thresholds
Manufacturer	onsemi
Maximum Operating Temperature	+125 C
Maximum Turn-Off Delay Time	63 ns
Maximum Turn-On Delay Time	56 ns
Minimum Operating Temperature	-40 C
Mounting Style	SMD/SMT
Number of Drivers	1 Driver
Number of Outputs	1 Output
Operating Supply Current	900 uA
Output Current	7.8 A
Output Voltage	0.8 V, 14.1 V
Package/Case	SOIC-16
Pd - Power Dissipation	900 mW
Product Category	Gate Drivers
Product Type	Gate Drivers
Product	IGBT, MOSFET Gate Drivers
Rise Time	18 ns
Series	NCD5700
Shutdown	Shutdown
Subcategory	PMIC-Power Management ICs
Supply Voltage - Max	5 V
Supply Voltage - Min	0 V
Technology	Si