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NCD5701BDR2G, High-Side or Low-Side Gate Driver IC Non-Inverting 8-SOIC
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NCD5701BDR2G, High-Side or Low-Side Gate Driver IC Non-Inverting 8-SOIC

Integrated Circuits (ICs)\Power Management (PMIC)Solutions for Energy Infrastructure onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Brand onsemi
Factory Pack Quantity: Factory Pack Quantity 2500
Fall Time 19 ns
Manufacturer onsemi
Maximum Operating Temperature +125 C
Maximum Turn-Off Delay Time 75 ns
Maximum Turn-On Delay Time 75 ns
Minimum Operating Temperature -40 C
Mounting Style SMD/SMT
Number of Drivers 1 Driver
Number of Outputs 1 Output
Operating Supply Current 10 uA
Output Current 4 A
Output Voltage 800 mV, 14.1 V
Package/Case SOIC-8
Pd - Power Dissipation 700 mW
Product Category Gate Drivers
Product Type Gate Drivers
Product IGBT, MOSFET Gate Drivers
Rise Time 18 ns
Series NCD5701
Shutdown Shutdown
Subcategory PMIC-Power Management ICs
Supply Voltage - Max 30 V
Supply Voltage - Min 20 V
Technology Si
Type Half-Bridge
Вес, г 0.1

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