Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
NCP5109ADR2G, Драйвер МОП-транзистора, высокой и низкой сторон, 10В - 20В питание, 500мА выход, 100нс задержка
NCP5106 & NCP5109 High Voltage Side Drivers
onsemi NCP5106 and NCP5109 High Voltage Side Drivers provide two outputs for direct drive of two N-channel power MOSFETs or Insulated-Gate Bipolar Transistors (IGBTs) arranged in a half-bridge configuration. These high voltage, high, and low side drivers feature a dV/dt immunity of 50 volts per nanosecond (V/ns) and are 3.3V and 5V input logic compatible. These devices use the bootstrap technique to ensure a proper drive of the High Side power switch and provide a rugged design.
Brand | onsemi |
Factory Pack Quantity: Factory Pack Quantity | 2500 |
Fall Time | 35 ns |
Manufacturer | onsemi |
Maximum Operating Temperature | +125 C |
Maximum Turn-Off Delay Time | 170 ns |
Maximum Turn-On Delay Time | 170 ns |
Minimum Operating Temperature | -40 C |
Mounting Style | SMD/SMT |
Number of Drivers | 2 Driver |
Number of Outputs | 2 Output |
Output Current | 500 mA |
Package / Case | SOIC-8 |
Product Category | Gate Drivers |
Product Type | Gate Drivers |
Product | IGBT, MOSFET Gate Drivers |
Rise Time | 85 ns |
Series | NCP5109 |
Subcategory | PMIC-Power Management ICs |
Supply Voltage - Max | 20 V |
Supply Voltage - Min | -300 mV |
Technology | Si |
Type | Half-Bridge |
Вес, г | 0.1 |