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мелкий и крупный опт
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Цена по запросу
NX7002BKSX
Semiconductors\Discrete Semiconductors
| Brand | Nexperia |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 2.9 ns, 2.9 ns |
| Forward Transconductance - Min | 600 mS, 600 mS |
| Id - Continuous Drain Current | 330 mA |
| Manufacturer | Nexperia |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | TSSOP-6 |
| Part # Aliases | 934068619115 |
| Pd - Power Dissipation | 870 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 1 nC |
| Rds On - Drain-Source Resistance | 5.7 Ohms, 5.7 Ohms |
| Rise Time | 4.3 ns, 4.3 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 6.9 ns, 6.9 ns |
| Typical Turn-On Delay Time | 4.7 ns, 4.7 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Continuous Drain Current (Id) | 270mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.8Ω@10V, 200mA |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@250uA |
| Power Dissipation (Pd) | 310mW |
| Type | 1PCSNChannel |
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