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OP593A, Phototransistor IR Chip Silicon 890nm 2-Pin TO-18 Bag
Optoelectronics\Photoelement\PhototransistorsPhototransistors 890nm Top View TO-18-2
Automotive | No |
Diameter | 5.72(Max) |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Fabrication Technology | NPN Transistor |
HTS | 8541.49.80.00 |
Lead Shape | Through Hole |
Lens Color | Blue |
Lens Shape Type | Domed |
Material | Silicon |
Maximum Collector Current (mA) | 50 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
Maximum Collector-Emitter Voltage (V) | 30 |
Maximum Dark Current (nA) | 100 |
Maximum Emitter-Collector Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 100 |
Maximum Power Dissipation (mW) | 250 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Through Hole |
Number of Channels per Chip | 1 |
Package Height | 7.62(Max) |
Packaging | Bag |
Part Status | Active |
PCB changed | 2 |
Peak Wavelength (nm) | 890 |
Phototransistor Type | Phototransistor |
Pin Count | 2 |
Polarity | NPN |
PPAP | No |
Standard Package Name | TO |
Supplier Package | TO-18 |
Type | IR Chip |
Viewing Orientation | Top View |
Current - Collector (Ic) (Max) | 50 mA |
Current - Dark (Id) (Max) | 100 nA |
Mounting Type | Through Hole |
Operating Temperature | -40°C ~ 100°C |
Orientation | Top View |
Package / Case | TO-18-2 |
Power - Max | 250 mW |
Voltage - Collector Emitter Breakdown (Max) | 30 V |
Wavelength | 890nm |