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PBSS5330PASX

Semiconductors\Discrete SemiconductorsBJT DFN-Packaged Power Bipolar Transistors Nexperia BJT DFN-Packaged Power Bipolar Transistors offer a small form factor that uses about 75% less board space and allows more design flexibility. These bipolar transistors feature reduced parasitic inductance and capacitance with an improved, low thermal resistance, enabling higher reliability. The BJT components are ideal for applications where space is at a premium. Applications include mobile devices, wearables, automotive sensors, and camera modules.

Brand	Nexperia
Collector- Base Voltage VCBO	30 V
Collector- Emitter Voltage VCEO Max	30 V
Collector-Emitter Saturation Voltage	230 mV
Configuration	Single
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity	3000
Gain Bandwidth Product fT	165 MHz
Manufacturer	Nexperia
Maximum DC Collector Current	3 A
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package/Case	DFN-2020D-3
Part # Aliases	934068107115
Pd - Power Dissipation	2.5 W
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Subcategory	Transistors
Technology	Si
Transistor Polarity	PNP