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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
PBSS5350T,215
Semiconductors\Discrete SemiconductorsA range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors.
| Collector-Emitter Breakdown Voltage | 50V |
| Maximum DC Collector Current | 2A |
| Pd - Power Dissipation | 540mW |
| Transistor Type | PNP |
| Maximum Collector Base Voltage | 50 V |
| Maximum Collector Emitter Voltage | -50 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 100 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.2 W |
| Minimum DC Current Gain | 200 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23(TO-236AB) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Maximum Collector Emitter Saturation Voltage | 0.09@50mA@500mA|0.18@50mA@1A|0.32@100mA@2A|0.27@200mA@2A|0.39@300mA@3A V |
| Mounting | Surface Mount |
| Operating Temperature | -65 to 150 ?C |
| Package | 3TO-236AB |
| Packaging | Tape & Reel |
| Rad Hard | No |
| Type | PNP |
| Вес брутто | 0.03 |
| Транспортная упаковка: размер/кол-во | 58*48*45/3000 |
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