Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
PDTA143XT,215
Semiconductors\Discrete Semiconductors Описание Транзистор: PNP
Collector Current (Ic) | 100mA |
Collector Cut-Off Current (Icbo) | 100nA |
Collector-Emitter Breakdown Voltage (Vceo) | 50V |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 100mV@10mA, 500uA |
DC Current Gain (hFE@Ic,Vce) | 50@10mA, 5V |
Power Dissipation (Pd) | 250mW |
Transistor Type | One PNP-Pre-Biased |
Base resistor | 4.7kΩ |
Base-emitter resistor | 10kΩ |
Case | SOT23, TO236AB |
Collector current | 0.1A |
Collector-emitter voltage | 50V |
Current gain | 50 |
Frequency | 180MHz |
Kind of package | reel, tape |
Kind of transistor | BRT |
Manufacturer | NEXPERIA |
Mounting | SMD |
Polarisation | bipolar |
Power dissipation | 0.25W |
Type of transistor | PNP |