Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
PDTC123JT,215, Bipolar Transistors - Pre-Biased BIPOLAR TRANSISTORS PB
Semiconductors\Discrete Semiconductors Описание Транзистор NPN, биполярный, BRT, 50В, 100мА, 250мВт, SOT23,TO236AB Характеристики
Категория
Транзистор
Тип
биполярный
Вид
NPN
Категория | Транзистор |
Тип | биполярный |
Вид | NPN |
Base Product Number | PDTC123 -> |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 1ВµA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
ECCN | EAR99 |
HTSUS | 8541.21.0095 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Power - Max | 250mW |
REACH Status | REACH Unaffected |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | TO-236AB |
Transistor Type | NPN - Pre-Biased |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250ВµA, 5mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Collector-Emitter Breakdown Voltage | 50V |
Maximum DC Collector Current | 100mA |
Pd - Power Dissipation | 250mW |