Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
PMBT3906M,315, Bipolar Transistors - BJT PMBT3906M/SOT883/XQFN3
Semiconductors\Discrete Semiconductors
| Brand | Nexperia |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Collector-Emitter Saturation Voltage | 165 mV |
| Configuration | Single |
| Continuous Collector Current | -200 mA |
| DC Collector/Base Gain hFE Min | 180 |
| DC Current Gain hFE Max | 60 at 100 uA, 1 V |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity: Factory Pack Quantity | 10000 |
| Gain Bandwidth Product fT | 250 MHz |
| Manufacturer | Nexperia |
| Maximum DC Collector Current | 200 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package/Case | DFN1006-3 |
| Part # Aliases | 934063476315 |
| Pd - Power Dissipation | 590 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Qualification | AEC-Q101 |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | PNP |
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