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PMCPB5530X,115, MOSFET PMCPB5530X/SOT1118/HUSON6

Semiconductors\Discrete SemiconductorsMOSFET, N/P-CH, 20V, DFN2020; Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:650m

Brand	Nexperia
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity	3000
Fall Time	16 ns
Id - Continuous Drain Current	5.3 A
Manufacturer	Nexperia
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	DFN2020-6
Packaging	MouseReel
Pd - Power Dissipation	8.33 W
Product Category	MOSFET
Qg - Gate Charge	14.4 nC, 8.1 nC
Rds On - Drain-Source Resistance	70 mOhms
Rise Time	15 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel, P-Channel
Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	4 ns
Vds - Drain-Source Breakdown Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	0.65 V, -0.65 V
Package/Case	DFN-2020-6
Part # Aliases	934066582115
Product Type	MOSFET
Subcategory	MOSFETs
Vgs - Gate-Source Voltage	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage	650 mV