Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
PMCXB900UELZ, MOSFET PMCXB900UEL/ SOT1216/DFN1010B-6
Semiconductors\Discrete Semiconductors20V 265mW 700mV@250uA 1PCSN-Channel&1PCSP-Channel SOT1216 MOSFETs ROHS
| Continuous Drain Current (Id) | 600mA;500mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 470mΩ@4.5V, 600mA;1.02Ω@4.5V, 500mA |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 700mV@250uA |
| Input Capacitance (Ciss@Vds) | 21.3pF@10V;43pF@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 265mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF@10V;8pF@10V |
| Total Gate Charge (Qg@Vgs) | 400pC@4.5V;1.19nC@4.5V |
| Type | 1PCSN-Channel&1PCSP-Channel |
| Transistor Polarity | N and P Channel; Continuous Drain Current Id |
| Channel Type | Complementary N and P Channel |
| Continuous Drain Current Id N Channel | 600mA |
| Continuous Drain Current Id P Channel | 600mA |
| Drain Source On State Resistance N Channel | 0.47ohm |
| Drain Source On State Resistance P Channel | 0.47ohm |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| MSL | MSL 1-Unlimited |
| No. of Pins | 6Pins |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 380mW |
| Power Dissipation P Channel | 380mW |
| Product Range | Trench Series |
| Transistor Case Style | DFN1010B |
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