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По сертификату
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"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
PMDPB58UPE,115, MOSFET PMDPB58UPE/SOT1118/HUSON6
Semiconductors\Discrete Semiconductors20V 4.5A 58mΩ@4.5V,2A 515mW 950mV@250uA 2 P-Channel HUSON-6(2x2) MOSFETs ROHS
| Continuous Drain Current (Id) | 4.5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 58mΩ@4.5V, 2A |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 950mV@250uA |
| Input Capacitance (Ciss@Vds) | 804pF@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 515mW |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF@10V |
| Total Gate Charge (Qg@Vgs) | 9.5nC@4.5V |
| Type | 2 P-Channel |
| Brand | Nexperia |
| Channel Mode | Enhancement |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 4.5 A |
| Manufacturer | Nexperia |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package/Case | DFN-2020-6 |
| Part # Aliases | 934066845115 |
| Pd - Power Dissipation | 1.21 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 9.5 nC |
| Rds On - Drain-Source Resistance | 58 mOhms, 58 mOhms |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage | 950 mV |
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