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PMF250XNEX, MOSFET PMF250XNE/SOT323/SC-70
Semiconductors\Discrete SemiconductorsSOT323 Surface-Mounted Package Products
Nexperia SOT323 Surface-Mounted Package Products offer a plastic, 3 leads, 1.3mm pitch, 2mm x 1.25mm x 0.95mm body surface-mounted package. The SOT23 package has been a constant for the last 50 years, leading to many offspring, such as the SOT223 and SOT323. The SOT323 offers an industry code of SC-70, a descriptive code of SOT (small outline transistor), and a footprint area of 6.23mm 2.
| Brand | Nexperia |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 6 ns |
| Forward Transconductance - Min | 3.5 S |
| Id - Continuous Drain Current | 1 A |
| Manufacturer | Nexperia |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | SOT-323-3 |
| Part # Aliases | 934068842115 |
| Pd - Power Dissipation | 342 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 1.05 nC |
| Rds On - Drain-Source Resistance | 254 mOhms |
| Rise Time | 14 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 7 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage | 750 mV |
| Continuous Drain Current (Id) | 1A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 212mΩ@4.5V, 900mA |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.25V@250uA |
| Input Capacitance (Ciss@Vds) | 81pF@15V |
| Power Dissipation (Pd) | 342mW |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF@15V |
| Total Gate Charge (Qg@Vgs) | 1.65nC@4.5V |
| Type | 1PCSNChannel |
| Case | SC70, SOT323 |
| Drain current | 0.5A |
| Drain-source voltage | 30V |
| Features of semiconductor devices | ESD protected gate |
| Gate charge | 1.65nC |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | NEXPERIA |
| Mounting | SMD |
| On-state resistance | 416mΩ |
| Polarisation | unipolar |
| Pulsed drain current | 4A |
| Type of transistor | N-MOSFET |
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