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PMGD780SN,115

Semiconductors\Discrete Semiconductors Описание Транзистор: N-MOSFET x2, полевой, 60В, 0,31А, 410мВт, SOT363 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Base Product Number	PMGD780 ->
Current - Continuous Drain (Id) @ 25В°C	490mA
Drain to Source Voltage (Vdss)	60V
ECCN	EAR99
FET Feature	Logic Level Gate
FET Type	2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs	1.05nC @ 10V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	23pF @ 30V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	410mW
Rds On (Max) @ Id, Vgs	920mOhm @ 300mA, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	TrenchMOSв„ў ->
Supplier Device Package	6-TSSOP
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Brand	Nexperia
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity	3000
Fall Time	4 ns
Id - Continuous Drain Current	490 mA
Manufacturer	Nexperia
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number Of Channels	2 Channel
Packaging	Cut Tape or Reel
Part # Aliases	PMGD780SN T/R
Pd - Power Dissipation	410 mW
Product	MOSFET Small Signal
Product Category	MOSFET
Product Type	MOSFET
Rds On - Drain-Source Resistance	780 mOhms
Rise Time	4 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	5 ns
Typical Turn-On Delay Time	2 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V