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Только с Юр. Лицами,
мелкий и крупный опт
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Цена по запросу
PMH600UNEH
Semiconductors\Discrete SemiconductorsSOT-8001-3 MOSFETs ROHS
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
| Brand | Nexperia |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 10000 |
| Fall Time | 36 ns |
| Forward Transconductance - Min | 1.1 S |
| Id - Continuous Drain Current | 800 mA |
| Manufacturer | Nexperia |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | DFN-0606-3 |
| Part # Aliases | 934660487125 |
| Pd - Power Dissipation | 625 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 310 pC |
| Rds On - Drain-Source Resistance | 620 mOhms |
| Rise Time | 3 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 9 ns |
| Typical Turn-On Delay Time | 1 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage | 450 mV |
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