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Только с Юр. Лицами,
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Цена по запросу
PMN40ENAX, MOSFET PMN40ENA/SOT457/SC-74
Semiconductors\Discrete SemiconductorsN-Channel 60 V 4.2A (Ta) 652mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
| Current - Continuous Drain (Id) @ 25°C | 4.2A(Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Package / Case | SC-74, SOT-457 |
| Power Dissipation (Max) | 652mW(Ta), 7.5W(Tc) |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 4.2A, 10V |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Continuous Drain Current (Id) | 4.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 43mΩ@4.2A, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.7V@250uA |
| Input Capacitance (Ciss@Vds) | 590pF@30V |
| Power Dissipation (Pd) | 652mW;7.5W |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
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