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PMV160UP,215, MOSFET 20V P-CHANNEL 1.2A TRENCHMOS

Semiconductors\Discrete Semiconductors Описание Транзистор: P-MOSFET, полевой, -20В, -0,8А, 480мВт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Base Product Number	PMV160 ->
Current - Continuous Drain (Id) @ 25В°C	1.2A (Ta)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	365pF @ 10V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	335mW (Ta), 2.17W (Tc)
Rds On (Max) @ Id, Vgs	210mOhm @ 1.2A, 4.5V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±8V
Vgs(th) (Max) @ Id	950mV @ 250ВµA
Brand	Nexperia
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	17 ns
Id - Continuous Drain Current	1.2 A
Manufacturer	Nexperia
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOT-23-3
Part # Aliases	934064761215
Pd - Power Dissipation	480 mW
Product Category	MOSFET
Product Type	MOSFET
Product	MOSFET Small Signal
Qg - Gate Charge	3.3 nC
Rds On - Drain-Source Resistance	210 mOhms
Rise Time	26 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	7 ns
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	450 mV
Channel Type	P
Maximum Continuous Drain Current	1.2 A
Maximum Drain Source Resistance	210 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	+8 V
Maximum Gate Threshold Voltage	0.95V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.17 W
Minimum Gate Threshold Voltage	0.45V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	3.3 nC @ 4.5 V
Width	1.4mm