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PMV20XNEAR

Semiconductors\Discrete Semiconductors20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	6.3 A
Maximum Drain Source Resistance	34 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	12 V
Maximum Gate Threshold Voltage	1.25V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	6.94 W
Minimum Gate Threshold Voltage	0.75V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	9.9 nC @ 4 V
Width	1.4mm
Brand	Nexperia
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	22 ns
Id - Continuous Drain Current	6.3 A
Manufacturer	Nexperia
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Part # Aliases	934068717215
Pd - Power Dissipation	1.19 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	9.9 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	20 mOhms
Rise Time	40 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	44 ns
Typical Turn-On Delay Time	16 ns
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage	750 mV