Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

PMV230ENEAR, MOSFET PMV230ENEA/SOT23/TO-236AB

Semiconductors\Discrete Semiconductors60V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	1.5 A
Maximum Drain Source Resistance	222 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	20 V
Maximum Gate Threshold Voltage	2.7V
Maximum Operating Temperature	+150 C
Maximum Power Dissipation	1.45 W
Minimum Gate Threshold Voltage	1.3V
Minimum Operating Temperature	-55 C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	3.9 nC 10 V
Width	1.4mm
Brand	Nexperia
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	4.6 ns
Forward Transconductance - Min	6.2 S
Id - Continuous Drain Current	1.5 A
Manufacturer	Nexperia
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Part # Aliases	934068711215
Pd - Power Dissipation	950 mW
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	3.9 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	222 mOhms
Rise Time	8.2 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	6.3 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.3 V
Continuous Drain Current (Id)	1.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)	222mΩ@1.5A, 10V
Drain Source Voltage (Vdss)	60V
Gate Threshold Voltage (Vgs(th)@Id)	2.7V@250uA
Input Capacitance (Ciss@Vds)	177pF@30V
Power Dissipation (Pd)	480mW;1.45W
Total Gate Charge (Qg@Vgs)	4.8nC@10V
Type	1PCSNChannel