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PMV30UN2R, MOSFET PMV30UN2/SOT23/TO-236AB

Semiconductors\Discrete SemiconductorsSwitching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V.

Continuous Drain Current (Id) @ 25В°C	4.2A
Power Dissipation-Max (Ta=25В°C)	490mW
Rds On - Drain-Source Resistance	32mО© @ 4.2A,4.5V
Transistor Polarity	N Channel
Vds - Drain-Source Breakdown Voltage	20V
Vgs - Gate-Source Voltage	900mV @ 250uA
кол-во в упаковке	1
Case	SOT23, TO236AB
Drain current	2.7A
Drain-source voltage	20V
Gate charge	11nC
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	NEXPERIA
Mounting	SMD
On-state resistance	50mΩ
Polarisation	unipolar
Pulsed drain current	18A
Type of transistor	N-MOSFET
Channel Mode	Enhancement
Channel Type	N
Lead Finish	Tin
Max Processing Temp	260
Maximum Continuous Drain Current	5.4 A
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	12 V
Operating Temperature	-55 to 150 °C
RDS-on	32@4.5V mOhm
Typical Fall Time	10 ns
Typical Rise Time	26 ns
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	7 ns
Maximum Drain Source Resistance	100 mΩ
Maximum Gate Threshold Voltage	0.9V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	5 W
Minimum Gate Threshold Voltage	0.4V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TO-236
Pin Count	3
Series	PMV30UN2
Transistor Configuration	Single
Typical Gate Charge @ Vgs	6.2 nC @ 4.5 V
Width	1.4mm
Continuous Drain Current (Id)	4.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)	32mΩ@4.5V, 4.2A
Drain Source Voltage (Vdss)	20V
Gate Threshold Voltage (Vgs(th)@Id)	900mV@250uA
Input Capacitance (Ciss@Vds)	655pF@10V
Power Dissipation (Pd)	490mW;5W
Total Gate Charge (Qg@Vgs)	11nC@4.5V
Type	1PCSNChannel