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PMV30XPEAR, PMV30XPEA/SOT23/TO-236AB

Semiconductors\Discrete Semiconductors Описание Транзистор P-MOSFET, полевой, -20В, -2,8А, Idm -18А, 0,98Вт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Continuous Drain Current (Id) @ 25В°C	4.5A
Power Dissipation-Max (Ta=25В°C)	490mW
Rds On - Drain-Source Resistance	34mО© @ 3A,4.5V
Transistor Polarity	P Channel
Vds - Drain-Source Breakdown Voltage	20V
Vgs - Gate-Source Voltage	1.25V @ 250uA
Case	SOT23, TO236AB
Drain current	-2.8A
Drain-source voltage	-20V
Features of semiconductor devices	ESD protected gate
Gate charge	17nC
Gate-source voltage	±12V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	NEXPERIA
Mounting	SMD
On-state resistance	57mΩ
Polarisation	unipolar
Power dissipation	0.98W
Pulsed drain current	-18A
Type of transistor	P-MOSFET
Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Resistance	57 mΩ
Maximum Drain Source Voltage	-20 V
Maximum Gate Source Voltage	12 V
Maximum Gate Threshold Voltage	-1.25V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	5435 mW
Minimum Gate Threshold Voltage	-0.75V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	11 nC @ 10 V
Width	1.4mm