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PMV52ENEAR, MOSFET PMV52ENEA/SOT23/TO-236AB

Semiconductors\Discrete SemiconductorsMOSFET, AEC-Q101, N-CH, 30V, 3.2A, 0.63W; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

Brand	Nexperia
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	3 ns
Id - Continuous Drain Current	3.2 A
Manufacturer	Nexperia
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOT-23-3
Part # Aliases	934661153215
Pd - Power Dissipation	1.25 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	2.2 nC
Rds On - Drain-Source Resistance	70 mOhms
Rise Time	13 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	6 ns
Typical Turn-On Delay Time	2 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Continuous Drain Current (Id)	3.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)	70mΩ@3.2A, 10V
Drain Source Voltage (Vdss)	30V
Gate Threshold Voltage (Vgs(th)@Id)	2.5V@250uA
Input Capacitance (Ciss@Vds)	100pF@15V
Power Dissipation (Pd)	630mW;5.7W
Total Gate Charge (Qg@Vgs)	3.3nC@10V