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PMV65XPEAR, MOSFET PMV65XPEA/SOT23/TO-236AB

Semiconductors\Discrete Semiconductors Описание Транзистор: P-MOSFET Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	3.3 A
Maximum Drain Source Resistance	125 mΩ
Maximum Drain Source Voltage	-20 V
Maximum Gate Source Voltage	12 V
Maximum Gate Threshold Voltage	-1.25V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	6250 mW
Minimum Gate Threshold Voltage	-0.75V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	5 nC @ 10 V
Width	1.4mm
Continuous Drain Current (Id)	2.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)	78mΩ@2.8A, 4.5V
Drain Source Voltage (Vdss)	20V
Gate Threshold Voltage (Vgs(th)@Id)	1.25V@250uA
Input Capacitance (Ciss@Vds)	618pF@10V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	480mW;6.25W
Total Gate Charge (Qg@Vgs)	9nC@4.5V
Type	P Channel
Current - Continuous Drain (Id) @ 25В°C	2.8A(Ta)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	618pF @ 10V
Manufacturer	Nexperia USA Inc.
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	480mW(Ta), 6.25W(Tc)
Rds On (Max) @ Id, Vgs	78mOhm @ 2.8A, 4.5V
Supplier Device Package	TO-236AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±12V
Vgs(th) (Max) @ Id	1.25V @ 250ВµA