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PMXB43UNEZ, New ProductMOSFET PMXB43UNE/ SOT1215/DFN1010D-3
Semiconductors\Discrete SemiconductorsN-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V.
| Continuous Drain Current (Id) | 3.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 54mΩ@3.2A, 4.5V |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 900mV@250uA |
| Input Capacitance (Ciss@Vds) | 551pF@10V |
| Power Dissipation (Pd) | 400mW;8.33W |
| Total Gate Charge (Qg@Vgs) | 10nC@4.5V |
| Type | 1PCSNChannel |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Resistance | 120 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | 8 V |
| Maximum Gate Threshold Voltage | 0.9V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 8.33 W |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DFN1010D-3 |
| Pin Count | 4 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 5.7 nC @ 10 V |
| Width | 1.05mm |
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