Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
PMZ390UN,315, MOSFET PMZ390UN/SOT883/XQFN3
Semiconductors\Discrete Semiconductors30V 1.78A 460mΩ@4.5V,200mA 2.5W 950mV@250uA 1PCSNChannel SOT-883 MOSFETs ROHS
| Continuous Drain Current (Id) | 1.78A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 460mΩ@4.5V, 200mA |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 950mV@250uA |
| Input Capacitance (Ciss@Vds) | 43pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2.5W |
| Total Gate Charge (Qg@Vgs) | 890pC@4.5V |
| Type | 1PCSNChannel |
| Brand | Nexperia |
| Channel Mode | Enhancement |
| Factory Pack Quantity | 10000 |
| Id - Continuous Drain Current | 1.78 A |
| Manufacturer | Nexperia |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | DFN-1006-3 |
| Part # Aliases | 934060156315 |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 890 pC |
| Rds On - Drain-Source Resistance | 460 mOhms |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage | 450 mV |
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