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По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
PSMN011-60MSX, PSMN011-60MS/ SOT1210/mLFPAK
Semiconductors\Discrete SemiconductorsN-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio.
| Case | LFPAK33, SOT1210 |
| Drain current | 61A |
| Drain-source voltage | 60V |
| Gate charge | 23nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | NEXPERIA |
| Mounting | SMD |
| On-state resistance | 9.6mΩ |
| Polarisation | unipolar |
| Power dissipation | 91W |
| Pulsed drain current | 244A |
| Type of transistor | N-MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 61 A |
| Maximum Drain Source Resistance | 24.4 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 4.6V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 91 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | LFPAK33 |
| Pin Count | 4 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Width | 2.7mm |
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