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PSMN017-60YS,115, PSMN017-60YS/SOT669/LFPAK

Semiconductors\Discrete Semiconductors Описание Транзистор N-MOSFET, полевой, 60В, 44А, 74Вт, SOT669 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Brand	Nexperia
Channel Mode	Enhancement
Factory Pack Quantity: Factory Pack Quantity	1500
Id - Continuous Drain Current	31 A
Manufacturer	Nexperia
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-669-5
Part # Aliases	934064399115
Pd - Power Dissipation	74 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	20 nC
Rds On - Drain-Source Resistance	24.7 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	54 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Type	N
Maximum Continuous Drain Current	44 A
Maximum Drain Source Resistance	25 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	74 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	LFPAK, SOT-669
Pin Count	4
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	20 nC @ 10 V
Width	4.1mm