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PSMN027-100PS,127

Semiconductors\Discrete Semiconductors Описание Транзистор: N-MOSFET; полевой; 100В; 37А; Idm: 148А; 103Вт

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Continuous Drain Current (A)	37
Maximum Drain Source Resistance (mOhm)	26.8@10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	103000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Rail
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	8.9
Typical Gate Charge @ 10V (nC)	30\|24
Typical Gate Charge @ Vgs (nC)	30@10V\|24@10V
Typical Input Capacitance @ Vds (pF)	1624@50V
Typical Rise Time (ns)	11.4
Typical Turn-Off Delay Time (ns)	29.6
Typical Turn-On Delay Time (ns)	14.4
Brand	Nexperia
Factory Pack Quantity: Factory Pack Quantity	50
Id - Continuous Drain Current	37 A
Manufacturer	Nexperia
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Part # Aliases	934064326127
Pd - Power Dissipation	103 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	30 nC
Rds On - Drain-Source Resistance	26.8 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2 V