Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
PSMN3R9-100YSFX, PSMN3R9-100YSF/SOT1023/4 LEADS
Semiconductors\Discrete SemiconductorsN-Channel 100 V 120A (Tc) 245W (Tc) Surface Mount LFPAK56; Power-SO8
| Current - Continuous Drain (Id) @ 25°C | 120A(Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7360 pF @ 50 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Package / Case | SOT-1023, 4-LFPAK |
| Power Dissipation (Max) | 245W(Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 25A, 10V |
| Supplier Device Package | LFPAK56; Power-SO8 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Continuous Drain Current (Id) | 120A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.3mΩ@25A, 10V |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@1mA |
| Input Capacitance (Ciss@Vds) | 7.36nF@50V |
| Power Dissipation (Pd) | 245W |
| Total Gate Charge (Qg@Vgs) | 111nC@10V |
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