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PSMN4R0-40YS,115, MOSFET PSMN4R0-40YS/SOT669/LFPAK

Semiconductors\Discrete Semiconductors Описание Транзистор N-МОП, полевой, 40В, 100А, SOT669 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Continuous Drain Current (A)	100
Maximum Drain Source Resistance (mOhm)	4.2@10V
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	106000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	NRND
PCB changed	4
Pin Count	5
PPAP	No
Process Technology	TMOS
Product Category	Power MOSFET
Supplier Package	LFPAK
Tab	Tab
Typical Fall Time (ns)	12
Typical Gate Charge @ 10V (nC)	31\|38
Typical Gate Charge @ Vgs (nC)	31@10V\|38@10V
Typical Input Capacitance @ Vds (pF)	2410@20V
Typical Rise Time (ns)	19
Typical Turn-Off Delay Time (ns)	34
Typical Turn-On Delay Time (ns)	18