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PT100MF0MP, Phototransistors SMT Phototransistor 15 910nm 3.45mA
Sensors\Optical Sensors\Phototransistors Описание Фототранзистор, Разм: 3x2,2x1,5мм, -p макс: 910нм, 35В, 15°
| Angle of Half Sensitivity | ±15 ° |
| Collector Current | 20mA |
| Collector Emitter Voltage | 35V |
| Emitter Collector Voltage | 6V |
| Maximum Dark Current | 100nA |
| Maximum Light Current | 3.45mA |
| Maximum Wavelength Detected | 910nm |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Output Signal Type | Analogue |
| Package Type | SMD |
| Polarity | Positive |
| Saturation Voltage | 0.4V |
| Series | PT100 |
| Spectral Range of Sensitivity | Maximum of 910 nm |
| Spectrums Detected | Infrared |
| Typical Fall Time | 6µs |
| Typical Rise Time | 5µs |
| Width | 1.5mm |
| Automotive | No |
| Cut-Off Filter | Visible Cut-off |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees - (??) | 30 |
| Maximum Collector Current - (mA) | 20 |
| Maximum Collector-Emitter Saturation Voltage - (V) | 0.4 |
| Maximum Collector-Emitter Voltage - (V) | 35 |
| Maximum Dark Current - (nA) | 100 |
| Maximum Emitter-Collector Voltage - (V) | 6 |
| Maximum Fall Time - (ns) | 6000(Typ) |
| Maximum Light Current - (uA) | 3450 |
| Maximum Power Dissipation - (mW) | 75 |
| Maximum Rise Time - (ns) | 5000(Typ) |
| Military | No |
| Number of Channels per Chip | 1 |
| Operating Temperature - (??C) | -30~85 |
| Peak Wavelength - (nm) | 910 |
| Pin Count | 2 |
| Supplier Package | SMD |
| Viewing Orientation | Side View |
| Вес, г | 0.1 |
