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QPA2212D, RF Amplifier 27-31GHz 25W GaN POWER AMP

RF & Wireless\RF Integrated Circuits\RF AmplifierQPA2212D Ka-Band GaN Power Amplifier Qorvo QPA2212D Ka-Band GaN Power Amplifier is fabricated using a 0.15µm Gallium Nitride on Silicon Carbide (GaN on SiC) process (QGaN15). Operating between 27GHz and 31GHz, the QPA2212D achieves 10W linear power with -25dBc intermodulation distortion and 22dB small-signal gain. Saturated output power is 25W with a power-added efficiency of 25%.

Brand	Qorvo
Development Kit	QPA2212D EVB
Factory Pack Quantity	10
Gain	21.7 dB
Input Return Loss	29 dB
Manufacturer	Qorvo
Maximum Operating Temperature	+85 C
Minimum Operating Temperature	-40 C
Mounting Style	SMD/SMT
Operating Frequency	27.5 GHz to 31 GHz
Operating Supply Current	460 mA
Operating Supply Voltage	22 V
Package/Case	Die
Pd - Power Dissipation	80.3 W
Product Category	RF Amplifier
Product Type	RF Amplifier
Subcategory	Wireless & RF Integrated Circuits
Technology	GaN SiC
Type	Power Amplifiers