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QPA2611, 5 W X-BD GAN PA
RF and Wireless\RF AmplifiersQPA261x X-Band Power Amplifiers
Qorvo QPA261x X-Band Power Amplifiers are high-performance amplifiers fabricated with 0.15µm GaN on SiC process (QGaN15). These power amplifiers support tight lattice spacing requirements for phased array radar applications. The QPA261x amplifiers feature RF input and output ports that are matched to 50Ω and include integrated DC blocking capacitors. These power amplifiers are stored at -55°C to 150°C temperature range. The QPA261x amplifiers operate at -4V to 0V maximum gate voltage range. These power amplifiers are ideal for use in radar, communication, and Satcom.
| Brand | Qorvo |
| Development Kit | QPA2611EVB |
| Factory Pack Quantity: Factory Pack Quantity | 50 |
| Gain | 35.5 dB |
| Input Return Loss | 12 dB |
| Manufacturer | Qorvo |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Operating Frequency | 8 GHz to 12 GHz |
| Operating Supply Current | 105 mA |
| Operating Supply Voltage | 24 V |
| Package / Case | QFN-24 |
| Pd - Power Dissipation | 11 W |
| Product Category | RF Amplifier |
| Product Type | RF Amplifier |
| Series | QPA2611 |
| Subcategory | Wireless & RF Integrated Circuits |
| Technology | GaN SiC |
| Type | Power Amplifiers |
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